MOSFET with Diode
Purpose
Ideal MOSFET with ideal anti-parallel diode.
Library
Switches
Description
This model of a Metal Oxide Semiconductor Field Effect Transistor has an
integrated anti-parallel diode. The diode is usually included in power MOSFET
packages.
Parameters and Dialog Box
-
Initial conductivity
- Initial conduction state of the device. The device is initially
blocking if the parameter evaluates to zero, otherwise it is conducting. This
parameter may either be a scalar or a vector corresponding to the implicit width
of the component. The default value is 0.
-
Thermal description
- Switching losses, conduction losses and thermal equivalent
circuit of the component. For more information see chapter Thermal Modeling.
-
Initial temperature
- Temperature of all thermal capacitors in the equivalent
Cauer network at simulation start. This parameter may either be a scalar or a
vector corresponding to the implicit width of the component.
Probe Signals
-
Device voltage
- The voltage measured between drain and source. The device
voltage can never be negative.
-
Device current
- The current through the device. The current is positive if it flows
through the MOSFET from drain to source and negative if it flows through the
diode from source to drain.
-
Device conductivity
- Conduction state of the internal switch. The signal outputs
0 when the device is blocking, and 1 when it is conducting.
-
Device junction temperature
- Temperature of the first thermal capacitor in the
equivalent Cauer network.
-
Device conduction loss
- Continuous thermal conduction losses in watt (W). Only
defined if the component is placed on a heat sink.
-
Device switching loss
- Instantaneous thermal switching losses in joule (J). Only
defined if the component is placed on a heat sink.