IGCT (Reverse Blocking)
Purpose
Ideal IGCT with optional forward voltage and on-resistance
Library
Electrical / Power Semiconductors
Description
The Integrated Gate Commutated Thyristor is a semiconductor switch that is
controlled via the external gate. It conducts a current from anode to cathode only if
the gate signal is not zero.
Parameters
The following parameters may either be scalars or vectors corresponding to the
implicit width of the component:
-
Forward voltage
- Additional dc voltage
in volts (V) between anode and
cathode when the IGCT is conducting. The default is 0.
-
On-resistance
- The resistance
of the conducting device, in ohms (
). The
default is 0.
-
Initial conductivity
- Initial conduction state of the IGCT. The IGCT is initially
blocking if the parameter evaluates to zero, otherwise it is conducting.
-
Thermal description
- Switching losses, conduction losses and thermal equivalent
circuit of the component. For more information see chapter Thermal Modeling.
If no thermal description is given the losses are calculated based on the voltage
drop
.
-
Initial temperature
- Temperature of all thermal capacitors in the equivalent
Cauer network at simulation start.
Probe Signals
-
IGCT voltage
- The voltage measured between anode and cathode.
-
IGCT current
- The current through the IGCT flowing from anode to cathode.
-
IGCT gate signal
- The gate input signal of the IGCT.
-
IGCT conductivity
- Conduction state of the internal switch. The signal outputs
0 when the IGCT is blocking, and 1 when it is conducting.
-
IGCT junction temperature
- Temperature of the first thermal capacitor in the
equivalent Cauer network.
-
IGCT conduction loss
- Continuous thermal conduction losses in watt (W). Only
defined if the component is placed on a heat sink.
-
IGCT switching loss
- Instantaneous thermal switching losses in joule (J). Only
defined if the component is placed on a heat sink.