GTO (Reverse Conducting)
Purpose
Ideal GTO with ideal anti-parallel diode
Library
Electrical / Power Semiconductors
Description
This model of a Gate Turn Off Thyristor has an integrated anti-parallel diode.
The diode is usually included in power GTO packages.
Parameters
The following parameters may either be scalars or vectors corresponding to the
implicit width of the component:
-
Initial conductivity
- Initial conduction state of the GTO. The GTO is initially
blocking if the parameter evaluates to zero, otherwise it is conducting.
-
Thermal description
- Switching losses, conduction losses and thermal equivalent
circuit of the component. For more information see chapters Thermal Modeling
and Losses of Semiconductor Switch with Diode for more information.
-
Initial temperature
- Temperature of all thermal capacitors in the equivalent
Cauer network at simulation start.
Probe Signals
-
Device voltage
- The voltage measured between anode and cathode.
-
Device current
- The current through the device flowing from anode to cathode.
-
Device gate signal
- The gate input signal of the device.
-
Device conductivity
- Conduction state of the internal switch. The signal outputs
0 when the device is blocking, and 1 when it is conducting.
-
Device junction temperature
- Temperature of the first thermal capacitor in the
equivalent Cauer network.
-
Device conduction loss
- Continuous thermal conduction losses in watt (W). Only
defined if the component is placed on a heat sink.
-
Device switching loss
- Instantaneous thermal switching losses in joule (J). Only
defined if the component is placed on a heat sink.