GTO (Reverse Conducting)
Purpose
Ideal GTO with ideal anti-parallel diode
Library
Electrical / Power Semiconductors
Description
This model of a Gate Turn Off Thyristor has an integrated anti-parallel diode. The diode is usually included in power GTO packages.
Parameters
The following parameters may either be scalars or vectors corresponding to the implicit width of the component:
- Initial conductivity
- Initial conduction state of the GTO. The GTO is initially blocking if the parameter evaluates to zero, otherwise it is conducting.
- Thermal description
- Switching losses, conduction losses and thermal equivalent circuit of the component. For more information see chapters Thermal Modeling and Losses of Semiconductor Switch with Diode for more information.
- Initial temperature
- Temperature of all thermal capacitors in the equivalent Cauer network at simulation start.
Probe Signals
- Device voltage
- The voltage measured between anode and cathode.
- Device current
- The current through the device flowing from anode to cathode.
- Device gate signal
- The gate input signal of the device.
- Device conductivity
- Conduction state of the internal switch. The signal outputs 0 when the device is blocking, and 1 when it is conducting.
- Device junction temperature
- Temperature of the first thermal capacitor in the equivalent Cauer network.
- Device conduction loss
- Continuous thermal conduction losses in watts (W). Only defined if the component is placed on a heat sink.
- Device switching loss
- Instantaneous thermal switching losses in joules (J). Only defined if the component is placed on a heat sink.