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GTO

Purpose

Ideal GTO with or without forward voltage and on-resistance.

Library

Electrical / Power Semiconductors

Description

pict

The Gate Turn Off Thyristor can also be switched off via the gate. Like a normal thyristor it closes if the voltage between anode and cathode is positive and a positive gate signal is applied. It opens if the current passes through zero or if the gate signal becomes negative.

Parameters

The following parameters may either be scalars or vectors corresponding to the implicit width of the component:

Forward voltage
Additional dc voltage Vf    in volts (V) between anode and cathode when the GTO is conducting. The default is 0.
On-resistance
The resistance Ron   of the conducting device, in ohms (_O_  ). The default is 0.
Initial conductivity
Initial conduction state of the GTO. The GTO is initially blocking if the parameter evaluates to zero, otherwise it is conducting.
Thermal description
Switching losses, conduction losses and thermal equivalent circuit of the component. For more information see chapter Thermal Modeling. If no thermal description is given the losses are calculated based on the voltage drop von = Vf + Ron ⋅i  .
Initial temperature
Temperature of all thermal capacitors in the equivalent Cauer network at simulation start.

Probe Signals

GTO voltage
The voltage measured between anode and cathode.
GTO current
The current through the GTO flowing from anode to cathode.
GTO conductivity
Conduction state of the internal switch. The signal outputs 0 when the GTO is blocking, and 1 when it is conducting.
GTO junction temperature
Temperature of the first thermal capacitor in the equivalent Cauer network.
GTO conduction loss
Continuous thermal conduction losses in watt (W). Only defined if the component is placed on a heat sink.
GTO switching loss
Instantaneous thermal switching losses in joule (J). Only defined if the component is placed on a heat sink.