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IGCT (Reverse Blocking)

Purpose

Ideal IGCT with optional forward voltage and on-resistance

Library

Electrical / Power Semiconductors

Description

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The Integrated Gate Commutated Thyristor is a semiconductor switch that is controlled via the external gate. It conducts a current from anode to cathode only if the gate signal is not zero.

Parameters

The following parameters may either be scalars or vectors corresponding to the implicit width of the component:

Forward voltage
Additional dc voltage Vf    in volts (V) between anode and cathode when the IGCT is conducting. The default is 0.
On-resistance
The resistance Ron   of the conducting device, in ohms (_O_  ). The default is 0.
Initial conductivity
Initial conduction state of the IGCT. The IGCT is initially blocking if the parameter evaluates to zero, otherwise it is conducting.
Thermal description
Switching losses, conduction losses and thermal equivalent circuit of the component. For more information see chapter Thermal Modeling. If no thermal description is given the losses are calculated based on the voltage drop von = Vf + Ron ⋅i  .
Initial temperature
Temperature of all thermal capacitors in the equivalent Cauer network at simulation start.

Probe Signals

IGCT voltage
The voltage measured between anode and cathode.
IGCT current
The current through the IGCT flowing from anode to cathode.
IGCT gate signal
The gate input signal of the IGCT.
IGCT conductivity
Conduction state of the internal switch. The signal outputs 0 when the IGCT is blocking, and 1 when it is conducting.
IGCT junction temperature
Temperature of the first thermal capacitor in the equivalent Cauer network.
IGCT conduction loss
Continuous thermal conduction losses in watts (W). Only defined if the component is placed on a heat sink.
IGCT switching loss
Instantaneous thermal switching losses in joules (J). Only defined if the component is placed on a heat sink.