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MOSFET

Purpose

Ideal MOSFET with optional on-resistance

Library

Electrical / Power Semiconductors

Description

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The Metal Oxide Semiconductor Field Effect Transistor is a semiconductor switch that is controlled via the external gate. It conducts a current from drain to source (or vice-versa) only if the gate signal is not zero.

Parameters

The following parameters may either be scalars or vectors corresponding to the implicit width of the component:

On-resistance
The resistance Ron   of the conducting device, in ohms (_O_  ). The default is 0.
Initial conductivity
Initial conduction state of the MOSFET. The MOSFET is initially blocking if the parameter evaluates to zero, otherwise it is conducting.
Thermal description
Switching losses, conduction losses and thermal equivalent circuit of the component. For more information see chapter Thermal Modeling. If no thermal description is given the losses are calculated based on the voltage drop von = Ron ⋅i  .
Initial temperature
Temperature of all thermal capacitors in the equivalent Cauer network at simulation start.

Probe Signals

MOSFET voltage
The voltage measured between drain and source.
MOSFET current
The current through the MOSFET flowing from drain to source.
MOSFET gate signal
The gate input signal of the MOSFET.
MOSFET conductivity
Conduction state of the internal switch. The signal outputs 0 when the MOSFET is blocking, and 1 when it is conducting.
MOSFET junction temperature
Temperature of the first thermal capacitor in the equivalent Cauer network.
MOSFET conduction loss
Continuous thermal conduction losses in watts (W). Only defined if the component is placed on a heat sink.
MOSET switching loss
Instantaneous thermal switching losses in joules (J). Only defined if the component is placed on a heat sink.